GP1M006A065PH

Global Power Technologies Group

GP1M006A065PH
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Part No. GP1M006A065PH
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 650V 5.5A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:-
Rds On (Max) @ Id, Vgs:1.6 Ohm @ 2.75A, 10V
Power Dissipation (Max):120W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1177pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 5.5A (Tc) 120W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
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