GA10SICP12-263

GeneSiC Semiconductor

GA10SICP12-263
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Part No. GA10SICP12-263
Manufacturer GeneSiC Semiconductor
Description TRANS SJT 1200V 25A TO263-7
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
500 pcs
$28.895
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Target Price:(USD)
Quantity:
Total:
$28.895

Specifications

Data sheet

Vgs(th) (Max) @ Id:-
Vgs (Max):-
Technology:SiC (Silicon Carbide Junction Transistor)
Supplier Device Package:D2PAK (7-Lead)
Series:-
Rds On (Max) @ Id, Vgs:100 mOhm @ 10A
Power Dissipation (Max):170W (Tc)
Packaging:Tube
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Other Names:1242-1318
GA10SICP12-263-ND
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1403pF @ 800V
FET Type:-
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):1200V
Detailed Description:1200V 25A (Tc) 170W (Tc) Surface Mount D2PAK (7-Lead)
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
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