GA05JT12-247

GeneSiC Semiconductor

GA05JT12-247
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Part No. GA05JT12-247
Manufacturer GeneSiC Semiconductor
Description TRANS SJT 1200V 5A
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:-
Vgs (Max):-
Technology:SiC (Silicon Carbide Junction Transistor)
Supplier Device Package:TO-247AB
Series:-
Rds On (Max) @ Id, Vgs:280 mOhm @ 5A
Power Dissipation (Max):106W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Other Names:1242-1185
GA05JT12247
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
FET Type:-
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):1200V
Detailed Description:1200V 5A (Tc) 106W (Tc) Through Hole TO-247AB
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
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