FQU12N20TU

onsemi

FQU12N20TU
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Part No. FQU12N20TU
Manufacturer onsemi
Description Transistor, mosfet, n-Channel, 200V V(Br)Dss, 9A I(D), to-251Aa Rohs Compliant: Yes
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 51879 pcs
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(In US Dollars)
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$0.346$0.312$0.281$0.275
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Target Price:(USD)
Quantity:
Total:
$0.346

Specifications

Data sheet

Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:QFET®
Rds On (Max) @ Id, Vgs:280 mOhm @ 4.5A, 10V
Power Dissipation (Max):2.5W (Ta), 55W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:910pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
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