FQP6N60C_F080

AMI Semiconductor / ON Semiconductor

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Part No. FQP6N60C_F080
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 5.5A TO-220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:QFET®
Rds On (Max) @ Id, Vgs:2 Ohm @ 2.75A, 10V
Power Dissipation (Max):125W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 5.5A (Tc) 125W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
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