FQI7N80TU

FQI7N80TU
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Part No. FQI7N80TU
Manufacturer onsemi
Description MOSFET N-CH 800V 6.6A I2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 2500 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs1000 pcs10000 pcs
$6.20$5.16$5.01$4.87$4.72
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$6.20

Specifications

Data sheet

Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK (TO-262)
Series:QFET®
Rds On (Max) @ Id, Vgs:1.5 Ohm @ 3.3A, 10V
Power Dissipation (Max):3.13W (Ta), 167W (Tc)
Packaging:Tube
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:52nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800V
Detailed Description:N-Channel 800V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
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