FQI5N20TU

AMI Semiconductor / ON Semiconductor

FQI5N20TU
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Part No. FQI5N20TU
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 200V 4.5A I2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK (TO-262)
Series:QFET®
Rds On (Max) @ Id, Vgs:1.2 Ohm @ 2.25A, 10V
Power Dissipation (Max):3.13W (Ta), 52W (Tc)
Packaging:Tube
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:270pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 4.5A (Tc) 3.13W (Ta), 52W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
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