FQE10N20CTU
AMI Semiconductor / ON Semiconductor
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See Product Specifications for product details.
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See Product Specifications for product details.
Buy FQE10N20CTU with confidence from CJJhk.com, 1 Year Warranty
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| Part No. | FQE10N20CTU |
|---|---|
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 200V 4A TO-126 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a Quote | ||||
Specifications
Data sheet
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-126 |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 2A, 10V |
| Power Dissipation (Max): | 12.8W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-225AA, TO-126-3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 200V |
| Detailed Description: | N-Channel 200V 4A (Tc) 12.8W (Tc) Through Hole TO-126 |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Email: | info@cjjhk.com |
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