FQB9N50CFTM_WS

AMI Semiconductor / ON Semiconductor

FQB9N50CFTM_WS
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Part No. FQB9N50CFTM_WS
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 500V 9A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263AB)
Series:FRFET®
Rds On (Max) @ Id, Vgs:850 mOhm @ 4.5A, 10V
Power Dissipation (Max):173W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:FQB9N50CFTM_WSCT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1030pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500V
Detailed Description:N-Channel 500V 9A (Tc) 173W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
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