FQB7N80TM_AM002

AMI Semiconductor / ON Semiconductor

FQB7N80TM_AM002
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Part No. FQB7N80TM_AM002
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 6.6A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263AB)
Series:QFET®
Rds On (Max) @ Id, Vgs:1.5 Ohm @ 3.3A, 10V
Power Dissipation (Max):3.13W (Ta), 167W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:52nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800V
Detailed Description:N-Channel 800V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
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