FQAF8N80

AMI Semiconductor / ON Semiconductor

FQAF8N80
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Part No. FQAF8N80
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 5.9A TO-3PF
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3PF
Series:QFET®
Rds On (Max) @ Id, Vgs:1.2 Ohm @ 2.95A, 10V
Power Dissipation (Max):107W (Tc)
Packaging:Tube
Package / Case:SC-94
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:57nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800V
Detailed Description:N-Channel 800V 5.9A (Tc) 107W (Tc) Through Hole TO-3PF
Current - Continuous Drain (Id) @ 25°C:5.9A (Tc)
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