FQA10N80_F109

AMI Semiconductor / ON Semiconductor

FQA10N80_F109
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Part No. FQA10N80_F109
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 9.8A TO-3P
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3P
Series:QFET®
Rds On (Max) @ Id, Vgs:1.05 Ohm @ 4.9A, 10V
Power Dissipation (Max):240W (Tc)
Packaging:Tube
Package / Case:TO-3P-3, SC-65-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:71nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800V
Detailed Description:N-Channel 800V 9.8A (Tc) 240W (Tc) Through Hole TO-3P
Current - Continuous Drain (Id) @ 25°C:9.8A (Tc)
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