FJV3108RMTF

AMI Semiconductor / ON Semiconductor

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Part No. FJV3108RMTF
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 200MW SOT23-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 36000 pcs
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:SOT-23-3 (TO-236)
Series:-
Resistor - Emitter Base (R2):22 kOhms
Resistor - Base (R1):47 kOhms
Power - Max:200mW
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 5mA, 5V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
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