FJN3306RBU

AMI Semiconductor / ON Semiconductor

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Part No. FJN3306RBU
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 300MW TO92-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:TO-92-3
Series:-
Resistor - Emitter Base (R2):47 kOhms
Resistor - Base (R1):10 kOhms
Power - Max:300mW
Packaging:Bulk
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
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