FDV302P

onsemi

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Part No. FDV302P
Manufacturer onsemi
Description Transistor MOSFET P-Channel 25V 125mA 350mW Surface Mount SOT-23
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 102486 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.09$0.082$0.074$0.072
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.09

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23
Series:-
Rds On (Max) @ Id, Vgs:10 Ohm @ 200mA, 4.5V
Power Dissipation (Max):350mW (Ta)
Packaging:Original-Reel®
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:FDV302PDKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:42 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:11pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:0.31nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Drain to Source Voltage (Vdss):25V
Detailed Description:P-Channel 25V 120mA (Ta) 350mW (Ta) Surface Mount SOT-23
Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
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