FDS6162N3

AMI Semiconductor / ON Semiconductor

FDS6162N3
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Part No. FDS6162N3
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 20V 21A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SO
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:4.5 mOhm @ 21A, 4.5V
Power Dissipation (Max):3W (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:FDS6162N3_NL
FDS6162N3_NLTR
FDS6162N3_NLTR-ND
FDS6162N3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:5521pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:73nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:N-Channel 20V 21A (Ta) 3W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C:21A (Ta)
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