FDM606P

onsemi

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Part No. FDM606P
Manufacturer onsemi
Description P-Channel 1.8V Logic Level Power Trench MOSFET
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 51864 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.673$0.607$0.548$0.536
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Target Price:(USD)
Quantity:
Total:
$0.673

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-MLP, MicroFET (3x2)
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:30 mOhm @ 6.8A, 4.5V
Power Dissipation (Max):1.92W (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-SMD, Flat Lead Exposed Pad
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:30nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 6.8A (Tc) 1.92W (Ta) Surface Mount 8-MLP, MicroFET (3x2)
Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
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