FDFMA2P853T

AMI Semiconductor / ON Semiconductor

FDFMA2P853T
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Part No. FDFMA2P853T
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 20V 3A 6-MICROFET
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:1.3V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:MicroFET 2x2 Thin
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:120 mOhm @ 3A, 4.5V
Power Dissipation (Max):1.4W (Ta)
Packaging:Cut Tape (CT)
Package / Case:6-UDFN Exposed Pad
Other Names:FDFMA2P853TCT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:435pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
FET Type:P-Channel
FET Feature:Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount MicroFET 2x2 Thin
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
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