FDC8601

onsemi

FDC8601
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Part No. FDC8601
Manufacturer onsemi
Description N-Channel Shielded Gate Power Trench? MOSFET, 100 V, 2.7 A, 109 m
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 39751 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.777$0.701$0.633$0.619
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.777

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-SSOT
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:109 mOhm @ 2.7A, 10V
Power Dissipation (Max):1.6W (Ta)
Packaging:Cut Tape (CT)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Other Names:FDC8601CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:210pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:5nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 2.7A (Ta) 1.6W (Ta) Surface Mount 6-SSOT
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
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