FDB9503L-F085

AMI Semiconductor / ON Semiconductor

FDB9503L-F085
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Part No. FDB9503L-F085
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 40V 110A D2PAK
Lead Free Status / RoHS Status
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Reference Price
(In US Dollars)
800 pcs
$2.115
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Target Price:(USD)
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Total:
$2.115

Specifications

Data sheet

Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263AB)
Series:Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:2.6 mOhm @ 80A, 10V
Power Dissipation (Max):333W (Tj)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:FDB9503L_F085
FDB9503L_F085-ND
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Manufacturer Standard Lead Time:52 Weeks
Input Capacitance (Ciss) (Max) @ Vds:8320pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:255nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):40V
Detailed Description:P-Channel 40V 110A (Tc) 333W (Tj) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
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