FCP650N80Z

AMI Semiconductor / ON Semiconductor

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Part No. FCP650N80Z
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 10A
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 746 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs800 pcs1600 pcs
$3.37$3.043$2.445$1.717$1.576
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$3.37

Specifications

Data sheet

Vgs(th) (Max) @ Id:4.5V @ 800µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220
Series:SuperFET® II
Rds On (Max) @ Id, Vgs:650 mOhm @ 4A, 10V
Power Dissipation (Max):162W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:52 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1565pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800V
Detailed Description:N-Channel 800V 10A (Tc) 162W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
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