FCH099N65S3_F155

AMI Semiconductor / ON Semiconductor

FCH099N65S3_F155
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Part No. FCH099N65S3_F155
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 650V 30A TO247-3
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Specifications

Data sheet

Vgs(th) (Max) @ Id:4.5V @ 3mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247-3
Series:SuperFET® III
Rds On (Max) @ Id, Vgs:99 mOhm @ 15A, 10V
Power Dissipation (Max):227W (Tc)
Package / Case:TO-247-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2480pF @ 400V
Gate Charge (Qg) (Max) @ Vgs:61nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 30A (Tc) 227W (Tc) Through Hole TO-247-3
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
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