EPC2016C

EPC

EPC2016C
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Part No. EPC2016C
Manufacturer EPC
Description Power Field-Effect Transistor, 18A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide...
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 20262 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.424$1.285$1.159$1.134
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.424

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 3mA
Vgs (Max):+6V, -4V
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:Die
Series:eGaN®
Rds On (Max) @ Id, Vgs:16 mOhm @ 11A, 5V
Power Dissipation (Max):-
Packaging:Tape & Reel (TR)
Package / Case:Die
Other Names:917-1080-2
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:420pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 18A (Ta) Surface Mount Die
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
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