DTD513ZMT2L

LAPIS Semiconductor

DTD513ZMT2L
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Part No. DTD513ZMT2L
Manufacturer ROHM
Description Pre-Biased Bipolar Transistor (BJT) NPN Pre-Biased 12 V 5 mA 26 MHz 15 mW Surface Mount VMT3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 93132 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.096$0.087$0.078$0.077
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.096

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):12V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:VMT3
Series:-
Resistor - Emitter Base (R2):10 kOhms
Resistor - Base (R1):1 kOhms
Power - Max:150mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-723
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:260MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 12V 500mA 260MHz 150mW Surface Mount VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 100mA, 2V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):500mA
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