DTB113ZSTP

LAPIS Semiconductor

DTB113ZSTP
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Part No. DTB113ZSTP
Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS PNP 300MW SPT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Transistor Type:PNP - Pre-Biased
Supplier Device Package:SPT
Series:-
Resistor - Emitter Base (R2):10 kOhms
Resistor - Base (R1):1 kOhms
Power - Max:300mW
Packaging:Tape & Box (TB)
Package / Case:SC-72 Formed Leads
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:200MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT
DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 50mA, 5V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):500mA
Base Part Number:DTB113
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