CSD25501F3T

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Part No. CSD25501F3T
Manufacturer N/A
Description -20-V, P channel NexFET? power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
Lead Free Status / RoHS Status
In stock 46556 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.477$0.43$0.388$0.38
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Target Price:(USD)
Quantity:
Total:
$0.477

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.05V @ 250µA
Vgs (Max):-20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:3-LGA (0.73x0.64)
Series:FemtoFET™
Rds On (Max) @ Id, Vgs:76 mOhm @ 400mA, 4.5V
Power Dissipation (Max):500mW (Ta)
Packaging:Original-Reel®
Package / Case:3-XFLGA
Other Names:296-47556-6
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:35 Weeks
Input Capacitance (Ciss) (Max) @ Vds:385pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:1.33nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 3.6A (Ta) 500mW (Ta) Surface Mount 3-LGA (0.73x0.64)
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
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