CSD23202W10

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Part No. CSD23202W10
Manufacturer N/A
Description -12-V, P channel NexFET? power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 40877 pcs
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$0.54$0.488$0.44$0.43
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Target Price:(USD)
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$0.54

Specifications

Data sheet

Vgs(th) (Max) @ Id:900mV @ 250µA
Vgs (Max):-6V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-DSBGA (1x1)
Series:NexFET™
Rds On (Max) @ Id, Vgs:53 mOhm @ 500mA, 4.5V
Power Dissipation (Max):1W (Ta)
Packaging:Original-Reel®
Package / Case:4-UFBGA, DSBGA
Other Names:296-40000-6
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:512pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:3.8nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):12V
Detailed Description:P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
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