BSC028N06NSATMA1

International Rectifier (Infineon Technologies)

BSC028N06NSATMA1
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Part No. BSC028N06NSATMA1
Manufacturer Infineon
Description MOSFET Transistor, N Channel, 100 A, 60 V, 0.0025 ohm, 10 V, 2.8 V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 15917 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$2.113$1.907$1.72$1.683
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$2.113

Specifications

Data sheet

Voltage - Test:2700pF @ 30V
Voltage - Breakdown:PG-TDSON-8
Vgs(th) (Max) @ Id:2.8 mOhm @ 50A, 10V
Vgs (Max):6V, 10V
Technology:MOSFET (Metal Oxide)
Series:OptiMOS™
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:23A (Ta), 100A (Tc)
Polarization:8-PowerTDFN
Other Names:BSC028N06NSATMA1TR
BSC028N06NSTR
BSC028N06NSTR-ND
SP000917416
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Manufacturer Part Number:BSC028N06NSATMA1
Input Capacitance (Ciss) (Max) @ Vds:37nC @ 10V
IGBT Type:±20V
Gate Charge (Qg) (Max) @ Vgs:2.8V @ 50µA
FET Feature:N-Channel
Expanded Description:N-Channel 60V 23A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8
Drain to Source Voltage (Vdss):-
Description:MOSFET N-CH 60V 23A TDSON-8
Current - Continuous Drain (Id) @ 25°C:60V
Capacitance Ratio:2.5W (Ta), 83W (Tc)
Email:info@cjjhk.com

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