BQ4013MA-120

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Part No. BQ4013MA-120
Manufacturer N/A
Description IC NVSRAM 1M PARALLEL 32DIP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Write Cycle Time - Word, Page:120ns
Voltage - Supply:4.75 V ~ 5.5 V
Technology:NVSRAM (Non-Volatile SRAM)
Supplier Device Package:32-DIP Module (18.42x42.8)
Series:-
Packaging:Tray
Package / Case:32-DIP Module (0.61", 15.49mm)
Operating Temperature:0°C ~ 70°C (TA)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Memory Type:Non-Volatile
Memory Size:1Mb (128K x 8)
Memory Interface:Parallel
Memory Format:NVSRAM
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) Parallel 120ns 32-DIP Module (18.42x42.8)
Base Part Number:BQ4013
Access Time:120ns
Email:info@cjjhk.com

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