BD679AS

onsemi

BD679AS
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Part No. BD679AS
Manufacturer onsemi
Description NPN 40 W 80 V 4 A Through Hole Epitaxial Silicon Transistor TO-126
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 37686 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.363$0.327$0.295$0.289
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.363

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):80V
Vce Saturation (Max) @ Ib, Ic:2.8V @ 40mA, 2A
Transistor Type:NPN - Darlington
Supplier Device Package:TO-126
Series:-
Power - Max:40W
Packaging:Bulk
Package / Case:TO-225AA, TO-126-3
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:2 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
Current - Collector Cutoff (Max):500µA
Current - Collector (Ic) (Max):4A
Base Part Number:BD679
Email:info@cjjhk.com

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