BAS316,H3F

Toshiba Semiconductor and Storage

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Part No. BAS316,H3F
Manufacturer Toshiba Semiconductor and Storage
Description DIODE GEN PURP 100V 250MA USC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
3000 pcs
$0.032
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$0.032

Specifications

Data sheet

Voltage - Forward (Vf) (Max) @ If:1.25V @ 150mA
Voltage - DC Reverse (Vr) (Max):100V
Supplier Device Package:USC
Speed:Fast Recovery = 200mA (Io)
Series:-
Reverse Recovery Time (trr):3ns
Package / Case:SC-76, SOD-323
Other Names:BAS316H3F
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Diode Type:Standard
Detailed Description:Diode Standard 100V 250mA Surface Mount USC
Current - Reverse Leakage @ Vr:200nA @ 80V
Current - Average Rectified (Io):250mA
Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
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