APT50GP60B2DQ2G

Microsemi

APT50GP60B2DQ2G
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Part No. APT50GP60B2DQ2G
Manufacturer Microsemi
Description IGBT 600V 150A 625W TMAX
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
60 pcs
$14.325
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Total:
$14.325

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):600V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 50A
Test Condition:400V, 50A, 4.3 Ohm, 15V
Td (on/off) @ 25°C:19ns/85ns
Switching Energy:465µJ (on), 635µJ (off)
Series:POWER MOS 7®
Power - Max:625W
Packaging:Tube
Package / Case:TO-247-3 Variant
Other Names:APT50GP60B2DQ2GMI
APT50GP60B2DQ2GMI-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:PT
Gate Charge:165nC
Detailed Description:IGBT PT 600V 150A 625W Through Hole
Current - Collector Pulsed (Icm):190A
Current - Collector (Ic) (Max):150A
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