APT102GA60B2

Microsemi

APT102GA60B2
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Part No. APT102GA60B2
Manufacturer Microsemi
Description IGBT 600V 183A 780W TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):600V
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 62A
Test Condition:400V, 62A, 4.7 Ohm, 15V
Td (on/off) @ 25°C:28ns/212ns
Switching Energy:1.354mJ (on), 1.614mJ (off)
Series:POWER MOS 8™
Power - Max:780W
Packaging:Tube
Package / Case:TO-247-3 Variant
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:PT
Gate Charge:294nC
Detailed Description:IGBT PT 600V 183A 780W Through Hole
Current - Collector Pulsed (Icm):307A
Current - Collector (Ic) (Max):183A
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