2SK2719(F)

Toshiba Semiconductor and Storage

2SK2719(F)
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Part No. 2SK2719(F)
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 900V 3A TO-3PN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3P(N)
Series:-
Rds On (Max) @ Id, Vgs:4.3 Ohm @ 1.5A, 10V
Power Dissipation (Max):125W (Tc)
Packaging:Tube
Package / Case:TO-3P-3, SC-65-3
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):900V
Detailed Description:N-Channel 900V 3A (Ta) 125W (Tc) Through Hole TO-3P(N)
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
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