2SK1119(F)

Toshiba Semiconductor and Storage

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Part No. 2SK1119(F)
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 1000V 4A TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:3.5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:-
Rds On (Max) @ Id, Vgs:3.8 Ohm @ 2A, 10V
Power Dissipation (Max):100W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:60nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):1000V
Detailed Description:N-Channel 1000V 4A (Ta) 100W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
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