2SD2406-Y(F)

Toshiba Semiconductor and Storage

2SD2406-Y(F)
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Part No. 2SD2406-Y(F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 80V 4A TO220NIS
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):80V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 300mA, 3A
Transistor Type:NPN
Supplier Device Package:TO-220NIS
Series:-
Power - Max:25W
Packaging:Tube
Package / Case:TO-220-3 Full Pack
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:8MHz
Detailed Description:Bipolar (BJT) Transistor NPN 80V 4A 8MHz 25W Through Hole TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 5V
Current - Collector Cutoff (Max):30µA (ICBO)
Current - Collector (Ic) (Max):4A
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