2SD2257(Q,M)

Toshiba Semiconductor and Storage

2SD2257(Q,M)
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Part No. 2SD2257(Q,M)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 3A 100V TO220-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 1.5mA, 1.5A
Transistor Type:NPN
Supplier Device Package:TO-220NIS
Series:-
Power - Max:2W
Packaging:Bulk
Package / Case:TO-220-3 Full Pack
Other Names:2SD2257(QM)
2SD2257QM
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 2A, 2V
Current - Collector Cutoff (Max):10µA (ICBO)
Current - Collector (Ic) (Max):3A
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