2SD1221-Y(Q)

Toshiba Semiconductor and Storage

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Part No. 2SD1221-Y(Q)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 60V 3A PW MOLD
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:1V @ 300mA, 3A
Transistor Type:NPN
Supplier Device Package:PW-MOLD
Series:-
Power - Max:1W
Packaging:Bulk
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:3MHz
Detailed Description:Bipolar (BJT) Transistor NPN 60V 3A 3MHz 1W Surface Mount PW-MOLD
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 5V
Current - Collector Cutoff (Max):100µA (ICBO)
Current - Collector (Ic) (Max):3A
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