2SA1931,NETQ(J

Toshiba Semiconductor and Storage

2SA1931,NETQ(J
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Part No. 2SA1931,NETQ(J
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 5A 50V TO220-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:400mV @ 200mA, 2A
Transistor Type:PNP
Supplier Device Package:TO-220NIS
Series:-
Power - Max:2W
Packaging:Bulk
Package / Case:TO-220-3 Full Pack
Other Names:2SA1931NETQ(J
2SA1931NETQJ
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:60MHz
Detailed Description:Bipolar (BJT) Transistor PNP 50V 5A 60MHz 2W Through Hole TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1A, 1V
Current - Collector Cutoff (Max):1µA (ICBO)
Current - Collector (Ic) (Max):5A
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