2N7636-GA

GeneSiC Semiconductor

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Part No. 2N7636-GA
Manufacturer GeneSiC Semiconductor
Description TRANS SJT 650V 4A TO276
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:-
Vgs (Max):-
Technology:SiC (Silicon Carbide Junction Transistor)
Supplier Device Package:TO-276
Series:-
Rds On (Max) @ Id, Vgs:415 mOhm @ 4A
Power Dissipation (Max):125W (Tc)
Packaging:Tube
Package / Case:TO-276AA
Other Names:1242-1147
Operating Temperature:-55°C ~ 225°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:324pF @ 35V
FET Type:-
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):650V
Detailed Description:650V 4A (Tc) (165°C) 125W (Tc) Surface Mount TO-276
Current - Continuous Drain (Id) @ 25°C:4A (Tc) (165°C)
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