2N2907AE4

Microsemi

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Part No. 2N2907AE4
Manufacturer Microsemi
Description DIE TRANS PNP MED PWR GEN PURP T
Lead Free Status / RoHS Status RoHS Compliant
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Reference Price
(In US Dollars)
300 pcs
$4.468
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Total:
$4.468

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Transistor Type:PNP
Supplier Device Package:TO-18
Series:-
RoHS Status:RoHS Compliant
Power - Max:500mW
Package / Case:TO-206AA, TO-18-3 Metal Can
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor PNP 60V 600mA 500mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Current - Collector Cutoff (Max):10µA (ICBO)
Current - Collector (Ic) (Max):600mA
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