1N5809US

Microsemi

1N5809US
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Part No. 1N5809US
Manufacturer Microsemi
Description DIODE GEN PURP 100V 3A B-MELF
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In stock 58 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs
$11.29$10.159$8.353$6.998
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$11.29

Specifications

Data sheet

Voltage - Forward (Vf) (Max) @ If:875mV @ 4A
Voltage - DC Reverse (Vr) (Max):100V
Supplier Device Package:B, SQ-MELF
Speed:Fast Recovery = 200mA (Io)
Series:-
Reverse Recovery Time (trr):30ns
Packaging:Bulk
Package / Case:SQ-MELF, B
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:7 Weeks
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Diode Type:Standard
Detailed Description:Diode Standard 100V 3A Surface Mount B, SQ-MELF
Current - Reverse Leakage @ Vr:5µA @ 100V
Current - Average Rectified (Io):3A
Capacitance @ Vr, F:60pF @ 10V, 1MHz
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